Institute of Electronics Uzbek, Academy of Sciences of Uzbekistan, Tashkent, 700143, Academgorodok, Uzbekistan
Abstract:
By Born approximation the cross section of positronium (Ps) oxidation on acid centres localized on the surface of oxide carriers is calculated. Analysis of the kinetics of elementary processes in porous carriers based on aluminum oxide including processes of annihilation of positron, formation of Ps and oxidation of Ps on acid centres is given.