Combined NRA, channeling-RBS and FTIR ellipsometry analyses for the determination of the interface and bonding state of thin SiOx and SiNxOy layers

The molecular ions O⁺₂ and NO⁺ are im- planted at room temperature into single-crystal silicon with an energy of E=6 keV/atom at fluences ranging from 2.5×10¹⁶ to 3.5×10¹⁷ at/cm². The samples are processed by electron beam rapid thermal annealing at 1100^°C for 15 s. The depth distributions of the implanted specimens (¹⁸O) are determined by nuclear reaction analyses using the reaction ¹⁸O(p,)¹⁵N. Channeling-RBS measurements are performed to obtain the interface structure between the implanted layer and the single-crystal Si substrate. The chemical bonding state of as-implanted and implanted-annealed specimens is observed by FTIR ellipsometry measurements.