| 空间辐射效应对SRAM型FPGA的影响 |
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| 引用本文： | 邢克飞,杨俊,季金明.空间辐射效应对SRAM型FPGA的影响[J].微电子学与计算机,2006,23(12):107-110. |
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| 作者姓名： | 邢克飞 杨俊 季金明 |
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| 作者单位： | 1. 国防科技大学,湖南,长沙,410073
2. 上海航天电子有限公司五三九厂,上海,201800 |
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| 基金项目： | 国防科工委民用航天技术预先研究项目 |
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| 摘 要： | 以Xilinx的FPGA为例，结合相关试验数据，分析了空间总剂量效应、单粒子翻转、单粒子闩锁、单粒子功能中断、单粒子烧毁、单粒子瞬态脉冲和位移损伤等辐射效应对SRAMFPGA器件的漏极电流、阚值电压、逻辑功能等影响。分析了辐射效应的机理以及FPGA的失效模式。文章可以为SRAM型FPGA在航天领域中的应用提供参考。
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| 关 键 词： | 总剂量效应 单粒子效应 位移损伤 SRAM型FPGA |
| 文章编号： | 1000-7180（2006）12-0107-04 |
| 收稿时间： | 2005-11-28 |
| 修稿时间： | 2005年11月28 |
Radiation Effect to SRAM-based FPGA in Space |
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| XING Ke-fei,YANG Jun,JI Jin-ming.Radiation Effect to SRAM-based FPGA in Space[J].Microelectronics & Computer,2006,23(12):107-110. |
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| Authors: | XING Ke-fei YANG Jun JI Jin-ming |
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| Institution: | 1 National University of Defenee Technology, Changsha 410073, China;2 No. 539 Factory, Shanghai Aerospace Electronic Co. Ltd, Shanghai 201800 |
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| Abstract: | SRAM-based field programmable gate array(FPGA)of Xilinx Co.is taken as an example in the paper.Total ionizing dose effect,single event upset,single event latch,single event function interrupt,single event burnout,single event transient and displacement damage are analyzed based on some experiment data.The radiation effect to FPGA's drain current,gate voltage and logic function are also given.Because of the introduction to FPGA's fault reason and fault mode induced by radiation the paper can serve as reference to SRAM-based FPGA design in aerospace application. |
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| Keywords: | Total ionizing dose effect Single event effects Displacement damage SRAM-based FPGA |
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