| Abstract: | Within the framework of a simple (i.e., ignoring lateral interactions) lattice model, surface migration of adsorbed atoms of a crystalline substance A is considered for the case in which the surface is densely covered by the adsorbed atoms of a noncrystallized substance B. Simulation of the migration, performed by means of the Monte-Carlo method, demonstrates a sharp decrease in the root-mean-square displacement of the adsorbed atoms of A with an increase in the degree of covering by adsorbed atoms of B in the case where these adsorbed atoms exhibit weak migration mobility. This effect is associated with strong correlations in the directions of individual jumps of an adsorbed atom of A. The results of the simulation are applied to estimate the influence of the degree of covering of a surface with an impurity on the temperature at which a transition is accomplished from an nascent to a stepwise-layered mechanism of growth in silicon in molecular-beam epitaxy. V. D. Kuznetsov Siberian Institute for Technical Physics. Tomsk University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 89–94, June, 1998. |
