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MgO films grown on yttria-stabilized zirconia by molecular beam epitaxy
Authors:O. Maksimov   P. Fisher   M. Skowronski   P.A. Salvador   M. Snyder   J. Xu  X. Weng
Affiliation:

aElectro-Optics Center, Pennsylvania State University, Freeport, PA 16229, USA

bDepartment of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, PA 15213, USA

cDepartment of Engineering Science and Mechanics, Pennsylvania State University, University Park, PA 16802, USA

dMaterials Research Institute, Pennsylvania State University, University Park, PA 16802, USA

Abstract:MgO films were grown on (0 0 1) yttria-stabilized zirconia (YSZ) substrates by molecular beam epitaxy (MBE). The crystalline structures of these films were investigated using X-ray diffraction and transmission electron microscopy. Growth temperature was varied from 350 to 550 °C, with crystalline quality being improved at higher temperatures. The MgO films had a domain structure: (1 1 1)[1 1 2¯]MgO(0 0 1)[1 0 0]YSZ with four twin variants related by a 90° in-plane rotation about the [1 1 1]MgO axis. The observed epitaxial orientation was compared to previous reports of films grown by pulsed laser deposition and sputtering and explained as resulting in the lowest interface energy.
Keywords:A1. High resolution X-ray diffraction   A1. Reflection high energy electron diffraction   A1. Growth models   B1. Oxides   A3. Molecular beam epitaxy
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