| n-GaAs和p-GaN晶片的直接键合 |
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| 引用本文： | 李慧,何国荣,渠红伟,石岩,种明,曹玉莲,陈良惠.n-GaAs和p-GaN晶片的直接键合[J].半导体学报,2007,28(11):1815-1817. |
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| 作者姓名： | 李慧 何国荣 渠红伟 石岩 种明 曹玉莲 陈良惠 |
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| 作者单位： | 中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083;中国科学院半导体研究所纳米光电实验室,北京,100083 |
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| 摘 要： | 采用直接键合的方法成功实现了n-GaAs和p-GaN晶片的高质量键合.扫描电子显微镜观测结果表明,键合界面没有空洞.键合前后光致发光谱测试表明,键合工艺对材料质量影响不大.室温下界面的电流-电压特性表明,键合得到的n-GaAs/p-GaN异质结为肖特基二极管并且理想因子为1.08.n-GaAs和p-GaN材料直接键合的成功对于集成GaAs和GaN材料制备光电集成器件有重要意义.
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| 关 键 词： | 光电集成 直接键合 GaAs GaN |
| 文章编号： | 0253-4177（2007）11-1815-03 |
| 收稿时间： | 5/28/2007 2:25:18 PM |
| 修稿时间： | 6/8/2007 5:04:32 PM |
Direct Bonding of n-GaAs and p-GaN Wafers |
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| Li Hui,He Guorong,Qu Hongwei,Shi Yan,Chong Ming,Cao Yulian and Chen Lianghui.Direct Bonding of n-GaAs and p-GaN Wafers[J].Chinese Journal of Semiconductors,2007,28(11):1815-1817. |
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| Authors: | Li Hui He Guorong Qu Hongwei Shi Yan Chong Ming Cao Yulian and Chen Lianghui |
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| Institution: | Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Nano-Optoelectronics Laboratory,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
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| Abstract: | n-GaAs and p-GaN wafer pairs are successfully bonded by direct wafer bonding technology.SEM results indicate that there is no bonding gap at the bonding interface.PL measurements indicate that the bonding process does not visibly change the crystal quality.The current-voltage characteristics at room temperature show that the bonded n-GaAs/p-GaN heterojunction is a Shockley diode and the ideality factor n is 1.08.This high quality bonded wafer of n-GaAs/p-GaN has great implications for the optoelectronic integration of GaAs and GaN semiconductor materials. |
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| Keywords: | optoelectronic integration direct wafer bonding GaAs GaN |
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