Communication: Highest occupied molecular orbital-lowest unoccupied molecular orbital gaps of doped silicon clusters from core level spectroscopy |
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| Authors: | Lau J T Vogel M Langenberg A Hirsch K Rittmann J Zamudio-Bayer V Möller T von Issendorff B |
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| Institution: | Institut fu?r Methoden und Instrumentierung der Synchrotronstrahlung, Helmholtz-Zentrum Berlin fu?r Materialien und Energie GmbH, G-I2, Albert-Einstein-Stra?e 15, 12489 Berlin, Germany. tobias.lau@helmholtz-berlin.de |
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| Abstract: | A method to determine band gaps of size-selected and isolated nanoparticles by combination of valence band and core-level photoionization spectroscopy is presented. This approach is widely applicable and provides a convenient alternative to current standard techniques for the determination of band gaps by optical or photoelectron spectroscopy. A first application to vanadium doped silicon clusters confirms a striking size-dependence of their highest occupied-lowest unoccupied molecular orbital gaps. |
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