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硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究
引用本文:张铮,徐智谋,孙堂友,何健,徐海峰,张学明,刘世元.硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究[J].物理学报,2013,62(16):168102-168102.
作者姓名:张铮  徐智谋  孙堂友  何健  徐海峰  张学明  刘世元
作者单位:1. 华中科技大学光学与电子信息学院, 武汉 430074;2. 华中科技大学, 数字制造装备与技术国家重点实验室, 武汉 430074
摘    要:硅表面固有的菲涅耳反射, 使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉, 严重影响着器件的光电转换效率. 寻找一种方法降低硅基表面的反射率, 进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术, 在2 英寸单晶硅表面制备出周期530 nm, 高240 nm的二维六角截顶抛面纳米柱阵列结构. 反射率的测试表明, 当入射光角度为8° 时, 有纳米结构的硅片相对于无纳米 结构的硅片来讲, 在400到2500 nm波长范围内的反射率有很明显的降低, 其中, 800到2000 nm波段的反射率都小于10%, 在波长1360 nm附近的反射率由31%降低为零. 结合等效介质理论和严格耦合波理论对结果进行了分析和验证. 关键词: 纳米压印 截顶抛物面阵列 抗反射 等效介质理论

关 键 词:纳米压印  截顶抛物面阵列  抗反射  等效介质理论
收稿时间:2013-03-27

The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties
Zhang Zheng,Xu Zhi-Mou,Sun Tang-You,He Jian,Xu Hai-Feng,Zhang Xue-Ming,Liu Shi-Yuan.The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties[J].Acta Physica Sinica,2013,62(16):168102-168102.
Authors:Zhang Zheng  Xu Zhi-Mou  Sun Tang-You  He Jian  Xu Hai-Feng  Zhang Xue-Ming  Liu Shi-Yuan
Abstract:The intrinsic Fresnel reflection of Si surface, which causes more than 30% of the incident light to be reflected back from the surface, seriously influences the photoelectric conversion efficiency of Si-based semiconductor photoelectric device, such as solar cell and infrared detector. Recently, how to find a simple and efficient method, which is also suitable for mass production, aiming to suppress the undesired reflectivity and therefore improving the efficiency of the device, has become a research focus. In this work, we successfully convert a 2D nanopillar array structure into the Si surface via the nanoimprint lithography. The nanopillar has a flat surface and a paraboloid-like side wall profile. The period and the height of the hexagonal array structure are 530 nm and 240 nm, respectively. The cut-paraboloid nanopillar structure generates a relatively smooth gradient of the refractive index in the optical interface, which plays a key role in suppressing the Fresnel reflection in a wide range of wavelength. The reflectivity of the nanopillar arrayed Si surface is tested in a wavelength range from 400 to 2500 nm at an incident angle of 8° during the measurement. Compared with the unstructured Si, the structured Si has a reflectivity that significantly decreases in the test area: in a wavelength range from 400 to 1200 nm, and the reflectivity of the silicon surface is less than 10%. Specifically, the reflectivity is almost zero at a wavelength of about 1360 nm. The results are confirmed with the effective medium and rigorous coupled-wave theory.
Keywords: nanoimprint lithography cut-paraboloid arrays antireflection effective medium theory
Keywords:nanoimprint lithography  cut-paraboloid arrays  antireflection  effective medium theory
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