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Nd0.7Sr0.3MnO3陶瓷中界面“陷阱态”相关电阻转变行为
引用本文:陈顺生,熊良斌,杨昌平.Nd0.7Sr0.3MnO3陶瓷中界面“陷阱态”相关电阻转变行为[J].物理学报,2016,65(8):87302-087302.
作者姓名:陈顺生  熊良斌  杨昌平
作者单位:1. 湖北理工学院, 量子材料研究所, 黄石 435003; 2. 湖北工程学院物理与电子信息工程学院, 孝感 432000; 3. 湖北大学物理学与电子技术学院, 武汉 430062
基金项目:湖北省科技厅项目(批准号: 2014CFC1090)、湖北省教育厅科技项目(批准号: B2014025) 和中国博士后科学基金(批准号: 2015M572188)资助的课题.
摘    要:通过固相烧结和高能球磨后热处理两种方法分别得到不具晶(相)界和具有明显晶(相)界的两种Nd0.7Sr0.3MnO3陶瓷样品, 并用两线法和四线法分别对这两种样品的电极-块体接触界面和晶(相)界界面的I-V和电脉冲诱导电阻转变效应(EPIR)进行研究. 结果发现, 在两线法测试下, 电极-块体界面具有回滞的非线性I-V特征, 并能产生稳定的EPIR效应, EPIR的稳定性随温度的升高逐渐减弱并消失; 而对具有明显晶(相)界的陶瓷样品, 四线法测试结果表明, 虽然其I-V行为也具有非线性和回滞性特点, 但不能产生EPIR 效应. 这些奇特的界面输运行为与界面中的各种缺陷充当“陷阱”并实现对载流子的捕捉和释放过程密切相关. 而大量的晶(相)界界面及其复杂的连接方式导致较大的漏导则是晶(相)界不能出现EPIR效应的主要原因.

关 键 词:电阻转变效应  陷阱态  晶(相)界  锰氧化物
收稿时间:2015-12-11

Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic
Chen Shun-Sheng,Xiong Liang-Bin,Yang Chang-Ping.Interfacial trap dependent resistance switching effect in Nd0.7Sr0.3MnO3 ceramic[J].Acta Physica Sinica,2016,65(8):87302-087302.
Authors:Chen Shun-Sheng  Xiong Liang-Bin  Yang Chang-Ping
Institution:1. Institute for Quantum Materials, School of Mathematics and Physics, Hubei Polytechnic University, Huangshi 435003, China; 2. School of Physics and Electronic-Information Engineering, Hubei Engineering University, Xiaogan 432000, China; 3. Faculty of Physics and Electronic Technology, Hubei University, Wuhan 430062, China
Abstract:Switching behavior in Nd0.7Sr0.3MnO3 ceramic is investigated widely due to its close association with the new storage Resistive random access memory. In this work, we discuss the transport characteristic of the electrode-bulk interface and boundary/phase interface, and explain the differences between the two interfaces. Firstly, the Nd0.7Sr0.3MnO3 ceramic samples are prepared by solid-phase reaction and high-energy milling methods, respectively. And the transport properties of the two interfaces are investigated respectively by the two-line and four-line measurements. The results show that the Ag electrode-bulk interfaces exhibit nonlinear and hysteretic I-V characteristics and a stable resistance switching effect, and the stability of resistance switching behavior is reduced gradually with the increase of temperature. For the boundaries/phase interfaces, however, it does not exhibit resistance switching effect, although a nonlinear and hysteretic I-V behavior can also be observed under the four-line measurement mode. Various defects in the two interfaces act as traps and regulate the interfacial transports and result in the nonlinear and hysteretic I-V behaviors in the two interfaces. Additionally, the simulation experiments reveal that a large number of boundaries/phase interfaces and larger leakage conductance resulting from the complex connections of boundaries/phase interfaces are the main responsibilities for the fact that the boundaries/(phase) interfaces do not exhibit EPIR behavior as the electrode-bulk interface.
Keywords:resistance switching effect  traps state  boundary/phase interface  manganites
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