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肖特基势垒对CdS/CdTe薄膜电池J-V暗性能的影响
引用本文:赵守仁,黄志鹏,孙雷,孙朋超,张传军,邬云华,曹鸿,王善力,褚君浩.肖特基势垒对CdS/CdTe薄膜电池J-V暗性能的影响[J].物理学报,2013,62(16):168801-168801.
作者姓名:赵守仁  黄志鹏  孙雷  孙朋超  张传军  邬云华  曹鸿  王善力  褚君浩
作者单位:1. 中国科学院上海技术物理研究所, 红外物理国家重点实验室, 上海 200083;2. 上海太阳能电池研究与发展中心, 上海 201201;3. 华东师范大学信息科学技术学院, 上海 200241
摘    要:采用数学模拟方法分析了不同背接触势垒高度(φb) 对于CdS/CdTe薄膜电池的J-V(电流密度-电压)方程的影响, 得出了势垒高度与roll-over的变化对应关系. 采用相应Cu/Mo背电极的CdS/CdTe薄膜电池在220-300 K的变温J-V曲线的数值分析与理论分析相对照, 分析了背势垒对于J-V曲线拟合参数的影响. 修正了φb 与反向饱和电流(Jb0)关系式, 理论与实验符合得非常好. 关键词: CdS/CdTe薄膜 伏安特性 肖特基势垒 roll-over

关 键 词:CdS/CdTe薄膜  伏安特性  肖特基势垒  roll-over
收稿时间:2013-03-24

A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells
Zhao Shou-Ren,Huang Zhi-Peng,Sun Lei,Sun Peng-Chao,Zhang Chuan-Jun,Wu Yun-Hua,Cao Hong,Wang Shan-Li,Chu Jun-Hao.A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells[J].Acta Physica Sinica,2013,62(16):168801-168801.
Authors:Zhao Shou-Ren  Huang Zhi-Peng  Sun Lei  Sun Peng-Chao  Zhang Chuan-Jun  Wu Yun-Hua  Cao Hong  Wang Shan-Li  Chu Jun-Hao
Abstract:Numerical modeling is used to obtain insight into the details of the effect of back contact barrier height (φb) on the dark current density-voltage characteristics of CdS/CdTe solar cell. And relation between the roll-over and the barrier height is obtained. Analytic simulations are fitted to the measured current density-voltage curve in a temperature range from 220 to 300 K. And the influence of barrier height on J-V of the CdS/CdTe thin film solar cell with Cu/Mo back contact fitted parameters is discussed. The equation between back contact barrier height (φb) and the reverse saturation current density (Jb0) is revised and the experimental data are consistent with the simulation results very well.
Keywords: CdS/CdTe thin film solar cell current-votage characteristics Schottky barrier roll-over
Keywords:CdS/CdTe thin film solar cell  current-votage characteristics  Schottky barrier  roll-over
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