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基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究
引用本文:李淑萍,张志利,付凯,于国浩,蔡勇,张宝顺. 基于原位等离子体氮化及低压化学气相沉积-Si_3N_4栅介质的高性能AlGaN/GaN MIS-HEMTs器件的研究[J]. 物理学报, 2017, 66(19): 197301-197301. DOI: 10.7498/aps.66.197301
作者姓名:李淑萍  张志利  付凯  于国浩  蔡勇  张宝顺
作者单位:1. 苏州工业园区服务外包职业学院纳米科技学院, 苏州 215123;2. 中国科学院大学, 苏州纳米技术与纳米仿生研究所, 苏州 215123
基金项目:江苏省重点研发计划(批准号:BE2013002-2)、国家重点研发计划(批准号:2016YFC0801203)、江苏省重点研究与发展计划(批准号:BE2016084)、国家自然科学基金青年科学基金(批准号:11404372)和国家重点研发计划重大科学仪器设备开发专项(批准号:2013YQ470767)资助的课题.
摘    要:通过对低压化学气相沉积(LPCVD)系统进行改造,实现在沉积Si_3N_4薄膜前的原位等离子体氮化处理,氮等离子体可以有效地降低器件界面处的氧含量和悬挂键,从而获得了较低的LPCVD-Si_3N_4/GaN界面态,通过这种技术制作的MIS-HEMTs器件,在扫描栅压范围V_(G-sweep)=(-30 V,+24 V)时,阈值回滞为186 mV,据我们所知为目前高扫描栅压V_(G+)(20 V)下的最好结果.动态测试表明,在400 V关态应力下,器件的导通电阻仅仅上升1.36倍(关态到开态的时间间隔为100μs).

关 键 词:氮化镓高电子迁移率晶体管  低压化学气相沉积  原位氮化
收稿时间:2017-04-24

High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics
Li Shu-Ping,Zhang Zhi-Li,Fu Kai,Yu Guo-Hao,Cai Yong,Zhang Bao-Shun. High-performance AlGaN/GaN MIS-HEMT device based on in situ plasma nitriding and low power chemical vapor deposition Si3N4 gate dielectrics[J]. Acta Physica Sinica, 2017, 66(19): 197301-197301. DOI: 10.7498/aps.66.197301
Authors:Li Shu-Ping  Zhang Zhi-Li  Fu Kai  Yu Guo-Hao  Cai Yong  Zhang Bao-Shun
Affiliation:1. Suzhou Industrial Park Institute of Services Outsourcing, Suzhou 215123, China;2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China}
Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +>20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.
Keywords:GaN-based high electron mobility transistor  low pressure chemical vapor deposition  in-situ pre-deposition plasma nitridation
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