| Sc2O3替代层在532 nm高反膜中的应用 |
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| 引用本文： | 刘光辉,方明,晋云霞,张伟丽,贺洪波,范正修.Sc2O3替代层在532 nm高反膜中的应用[J].强激光与粒子束,2009,21(10). |
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| 作者姓名： | 刘光辉 方明 晋云霞 张伟丽 贺洪波 范正修 |
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| 作者单位： | 1.中国科学院 上海光学精密机械研究所 光学薄膜技术研发中心， 上海 201800；2.中国科学院 研究生院， 北京 100039 |
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| 基金项目： | 国家自然科学基金项目 |
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| 摘 要： | 将Sc2O3替代层引入到532 nm高反膜(HfO2/SiO2)n中，利用Sc2O3在盐酸中具有较好的溶解性这个特点，把膜层与基片脱离，以方便基片返修，缩短返修周期，降低成本。能量色散谱元素测试表明，脱离后Sc元素残留率为0。用Lamada900分光光度计、WykoNT1100轮廓仪和ZYGO干涉仪分别表征了替代层引入对高反膜的光谱、表面粗糙度和应力的影响，并测试了膜系在532 nm的激光损伤阈值的变化，结果表明Sc2O3替代层的引入对高反膜的性能几乎没有负面影响。
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| 关 键 词： | 替代层 高反膜 应力 激光损伤阈值 抛光 |
| 收稿时间： | 1900-01-01; |
Sc2O3 substitution layer for application in 532nm HR films |
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| Liu Guanghui,Fang Ming,Jin Yunxia,Zhang Weili,He Hongbo,Fan Zhengxiu.Sc2O3 substitution layer for application in 532nm HR films[J].High Power Laser and Particle Beams,2009,21(10). |
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| Authors: | Liu Guanghui Fang Ming Jin Yunxia Zhang Weili He Hongbo Fan Zhengxiu |
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| Institution: | 1. Research and Development Center for Optical Thin Film Coatings, Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences, P. O. Box 800-211, Shanghai 201800, China;2. Graduate University of Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | Sc2O3 substitution layer is introduced to 532 nm high reflector(HR) of HfO2/SiO2. According to its solution in hydrochloric acid, when failure occurs, putting the optics into acid, following by the solution of Sc2O3 substitution layer, the whole films are romoved clearly, then the substrates can be repolished simply and reused, time and cost can be saved greatly, too. 0% of Sc is detected by energy diffraction spectrum after acid soaking on BK7 substrates. Lamada900 spectrophotometer, optical interferometer and WykoNT1100 contourgraph are employed to characterize the transmittance, stress and surface morphology of the 532 nm HR films, and the laser induced damage thresholds of the films with 532 nm laser beam are measured b |
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| Keywords: | high reflector film stress laser induced damage threshold polishing |
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