| Abstract: | Efficient emission of THz radiation by AlGaAs nanowires via excitation of photocurrent by femtosecond optical pulses in nanowires was observed. Dynamics of photoinduced charge carrier was studied via influence of electron-hole plasma on THz radiation by optical pump THz probe method. It was found that characteristic time of screening of contact field is about 15 ps. Recombination of non-equilibrium occurs in two stages: fast recombination of free electron and holes (with relaxation time about 700 ps), and slow recombination (with relaxation time about 15 ns), which involves a capture of electrons and holes on the defects of crystalline structure of nanowires. |
