厚多晶硅膜饱和掺杂工艺研究

文章主要介绍了通过对厚多晶硅膜进行饱和掺杂来制作低阻值多晶电阻的方法。分析了多晶硅掺杂扩散模式,其中A类扩散模式能够得到较低的多晶电阻。要使杂质以A类扩散模式掺入多晶硅中,需要采用炉管扩散的方式进行长时间的掺杂。受杂质固溶度影响,一定厚度的掺杂多晶硅电阻值是无法无限制降低的,要制作低阻值多晶电阻,需要淀积厚多晶硅薄膜。文章选择炉管扩散的方式,进行低阻值的多晶硅薄膜制作,并通过实验,证实该方法可以得到稳定、均匀、低阻值的多晶硅方块电阻。

Process of Saturated Doping to Polysilicon Thick Film

This paper mainly introduced the method of making polysilicon resistor of low resistance by saturated doping. The doping model in polysilicon has been analyzed. Low resistant polysilicon can be made in manner of a type diffusion model. In this model, long-time doping in diffusion tube should be taken. The resistance of doped polysilicon with definite thickness can＇t be reduced infinitively due to the solubility of impurity. As a result, the thick polysilicon should be taken. In this article, Low resistance polysilicon film has been made in manner of definite furnace diffusion mode. Through experiment research, it has been proved that stable, uniform, low resistance polysilicon film can be made by this method.