Ultralow Threshold Red Vertical-Cavity Surface-Emitting Lasers |
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Institution: | State Key Laboratory on Integrated Optoelectronics ,Institute of Semiconductors, The Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | Visible Vertical-cavity Surface-emitting Lasers (VCSELs) have been designed and fabricated by using metalorganic vapor phase epitaxy. Using the 8λ optical cavities with 3 quan tum wells in A1GaInP/AlGaAs VCSEL's to reduce the drift leakage current and enhance the model gain, the device can operate continuous wave at wavelength of 670nm. For better performance, a misoriented (100) substrate (6~10° to (110)) has been used to reduce the ordering of AlGaInP. However, as the angle of misorientation increased, the symmetry of the structure became worse. This made it difficult to achieve little aperture device. By using 45° rotated selective oxidation method, a little aperture (1 × 1μm2) device with low threshold of 0.25mA can operate continuous wave at room temperature. |
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Keywords: | Surface Emitting Lasers Vertical Cavity |
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