| 高输入阻抗MOSFET工艺探讨 |
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| 引用本文： | 马瑞芬,张宝才,郭晓丽.高输入阻抗MOSFET工艺探讨[J].信息技术与信息化,1998(4). |
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| 作者姓名： | 马瑞芬 张宝才 郭晓丽 |
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| 作者单位： | 济南半导体实验所 |
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| 摘 要： | 本文以管芯为主，讨论了如何从工艺角度，实现高输入阻抗，涉及的主要工艺有：栅氧化、蒸发、光刻。
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| 关 键 词： | MOS管，阻抗，光刻，蒸发，栅氧化 |
The Process Discussion of High Input Impedance MOSFET |
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| Ma Ruifen, Zhang Baocai, Guo Xiaoli.The Process Discussion of High Input Impedance MOSFET[J].Information Technology & Informatization,1998(4). |
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| Authors: | Ma Ruifen Zhang Baocai Guo Xiaoli |
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| Institution: | Ma Ruifen; Zhang Baocai; Guo Xiaoli |
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| Abstract: | The chip is chief of the article, which mainly talk about how to turn the high input impedance into reality from this aspect of the processing. In relation to the chief processing, the gate oxide, evaporation, photo_etching. |
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| Keywords: | MOSFET Impedance Photoetching Evaporation Gate Oxide |
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