Study of the lateral distribution of neodymium ions implanted in silicon

Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5 × 10¹⁵ ions/cm² are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV—500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.