| γ radiation caused graphene defects and increased carrier density |
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| 引用本文： | 韩买兴,姬濯宇,商立伟,陈映平,王宏,刘欣,李冬梅,刘明.γ radiation caused graphene defects and increased carrier density[J].中国物理 B,2011,20(8):86102-086102. |
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| 作者姓名： | 韩买兴 姬濯宇 商立伟 陈映平 王宏 刘欣 李冬梅 刘明 |
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| 作者单位： | Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| 基金项目： | Project partially supported by the National Basic Research Program of China (Grant Nos. 2011CB808404 and 2009CB939703)
and the National Natural Science Foundation of China (Grant Nos. 60825403, 90607022, and 61001043). |
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| 摘 要： | We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.
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| 关 键 词： | graphene γ ray radiation Raman spectrum defects |
| 收稿时间： | 2011-03-16 |
| 修稿时间： | 4/7/2011 12:00:00 AM |
$\gamma$ radiation caused graphene defects and increased carrier density |
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| Han Mai-Xing,Ji Zhuo-Yu,Shang Li-Wei,Chen Ying-Ping,Wang Hong,Liu Xin,Li Dong-Mei and Liu Ming.$\gamma$ radiation caused graphene defects and increased carrier density[J].Chinese Physics B,2011,20(8):86102-086102. |
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| Authors: | Han Mai-Xing Ji Zhuo-Yu Shang Li-Wei Chen Ying-Ping Wang Hong Liu Xin Li Dong-Mei and Liu Ming |
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| Institution: | Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | We report on a micro-Raman investigation of inducing defects in mono-layer, bi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional (2D) and G band position evolution with the layer number increasing and D and D' bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density. |
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| Keywords: | graphene γ ray radiation Raman spectrum defects |
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