Electrochemical behavior of nanocrystalline diamond thin films grown in electrical arc plasma |
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Authors: | Yu V Pleskov M D Krotova S M Pimenov |
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Institution: | 1.Frumkin Institute of Physical Chemistry and Electrochemistry,Russian Academy of Sciences,Moscow,Russia;2.Prokhorov General Physics Institute,119991,Russia |
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Abstract: | Nitrogenated nanocrystalline diamond films with controlled electrical conductivity are grown in electrical arc plasma in CH4/H2/Ar/N2 gas mixtures and characterized by scanning electron microscopy and spectroscopic measurements. Their electrochemical properties
are studied by electrochemical impedance spectroscopy. Transfer coefficients of reactions in the Fe(CN)6]3−/4− redox system are determined. The electrochemical behavior of the material is controlled by its nitrogenation (3–20% N2 in the reaction gas mixture). The nitrogenated nanocrystalline diamond has higher differential capacitance in indifferent
electrolyte (1 M KCl) solution than not nitrogenated one; the nitrogenation also increases the reversibility of reactions
in the Fe(CN)6]3−/4− redox system. By and large, with nitrogenation of diamond, its electrochemical behavior changes from the one characteristic
of a “poor conductor” to that characteristic of metallike conductor. In this respect the nanocrystalline diamond electrodes
grown in the electrical arc plasma are similar to those grown in microwave plasma. |
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