Electron beam density study using a portable slit imaging system at the Shanghai Electron Beam Ion Trap

In this work, a portable slit imaging system is developed to study both the electron beam diameter and the profile of the newly developed Shanghai Electron Beam Ion Trap (Shanghai EBIT). Images are detected by a charge coupled device (CCD) sensitive to both X rays and longer wavelength photons (up to visible). Large scale ray tracings were conducted for correcting the image broadening effects caused by the finite slit width and the finite width of the CCD pixels. A numerical de-convolution method was developed to analyse and reconstruct the electron beam density distribution in the EBIT. As an example of the measured beam diameter and current density, the FWHM (full width at half maximum) diameter of the electron beam at 81 keV and 120 mA is found to be 76.2 μm and the density 2.00 × 10³ A·cm^-2, under a magnetic field of 3 T, including all corrections.