Interaction of oxygen with an Si(001) surface coated with bismuth |
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| Authors: | M Yu Pyatnitskii I F Koval’ P V Mel’nik N G Nakhodkin T V Afanas’eva |
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| Institution: | M. Yu. Pyatnitskii, I. F. Koval’, P. V. Mel’nik, N. G. Nakhodkin and T. V. Afanas’eva |
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| Abstract: | Ionization and Auger spectroscopy show that a submonolayer coating of bismuth on Si(001) reduces the initial attachment coefficient
for molecular oxygen by comparison with a clean Si(001) surface by two orders of magnitude, while exposure to >105 Langmuir of O2 causes bismuth to stimulate the formation of surface silicon oxide having stoichiometry close to SiO2.
Taras Shevchenko Kiev University, 64 ul. Vladimirskaya, Kiev 17, Ukraine 252601. Translated from Teoreticheskaya i éksperimental’naya
Khimiya, Vol. 33, No. 2, pp. 124–127, March–April, 1997. |
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