The Action of High-Power Pulsed Beams of Nanosecond Duration on Cadmium–Mercury Telluride Semiconductors

Calculations have been performed for the processes occurring in cadmium–mercury tellurides exposed to high-power pulsed beams in the region of high power densities. In particular, the depth distributions of the target temperature and temperature gradients, the quasi-static and dynamic stresses, and the effect of these factors on the redistribution of the interstitial impurity atoms have been calculated.