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Theory of the reentrant transition in a lamellar antiferromagnet: doped La2CuO4
Authors:L I Glazman  A S Ioselevich
Institution:(1) Institute of Theoretical Physics, Chalmers University of Technology, S-41296 Goteborg, Sweden;(2) L.D. Landau Institute for Theoretical Physics, USSR Academy of Sciences, Kosygina Street 2, 117940 Moscow, USSR;(3) Present address: Institute of Problems or Microelectronics Technology and High-Purity Materials, USSR Academy of Sciences, 142432 Chernogolovka, Moscow district, USSR
Abstract:The effect of impurity-induced states on the long range order in a lamellar antiferromagnet (AF) is studied and the magnetic phase-diagram of a lightly doped La2–x Sr x CuO4 is proposed. It is shown that long range magnetic perturbations and the layered structure cause the shrinkage of AF domain on the phase diagram and lead to the reentrant AF transition. A nonmonotonous dependence of the correlation length xgr2D on temperatureT is obtained; the dependence xgr2D (x) is exponential for highT and xgr2D simx 1/2 for lowT.
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