Annealing effects on the microstructure of sputtered gold layers on oxidized silicon investigated by scanning electron microscopy and scanning probe microscopy

The structure of Au layers deposited by sputtering on oxidized p-type Si(100) substrates is investigated by a combination of scanning electron microscopy and scanning probe microscopy. The effect of the temperature on the grain structure of the layers has been determined, revealing that an annealing temperature of 300° C results in a larger grain size and smoother surfaces but generates some cracks in the film surface. At an annealing temperature of 500° C, further grain growth is observed, but a high density of cracks and voids also results while there is little enhancement regarding the smoothness of the grain surfaces.