| 生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响 |
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| 引用本文： | 马明明,杨晓珊,郭祥,王一,汤佳伟,张之桓,徐筱晓,丁召.生长温度对In_(0.5)Ga_(0.5)As/GaAs量子点尺寸的影响[J].原子与分子物理学报,2019,36(1):103-108. |
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| 作者姓名： | 马明明 杨晓珊 郭祥 王一 汤佳伟 张之桓 徐筱晓 丁召 |
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| 作者单位： | 贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院,贵州大学大数据与信息工程学院 |
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| 摘 要： | 采用分子束外延(MBE)技术制备In_(0.5)Ga_(0.5)As/GaAs量子点,利用扫描隧道显微镜(STM)对不同衬底温度下生长的样品进行表征分析.研究表明量子点密度随温度升高先增大后减小,其尺寸随温度的升高而增大.另外,量子点以S-K模式生长并受Ostwald熟化机制影响,其尺寸增大所需的能量来自应变能和温度提供的能量,高温条件下表面原子的解吸附作用会限制量子点的生长.
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| 关 键 词： | MBE In0.5Ga0.5As/GaAs量子 S-K Ostwald |
| 收稿时间： | 2018/4/23 0:00:00 |
| 修稿时间： | 2018/5/23 0:00:00 |
Effect of Growth Temperature on Size of In0.5Ga0.5As/GaAs Quantum Dots |
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| Ma Ming-Ming,YangG Xiao-Shan,Guo Xiang,Wang Yi,Tang Jia-Wei,Zhang Zhi-Huan,Xu Xiao-Xiao and Ding Zhao.Effect of Growth Temperature on Size of In0.5Ga0.5As/GaAs Quantum Dots[J].Journal of Atomic and Molecular Physics,2019,36(1):103-108. |
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| Authors: | Ma Ming-Ming YangG Xiao-Shan Guo Xiang Wang Yi Tang Jia-Wei Zhang Zhi-Huan Xu Xiao-Xiao and Ding Zhao |
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| Institution: | College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University,College of Big Data and Information Engineering, Guizhou University and College of Big Data and Information Engineering, Guizhou University |
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| Abstract: | The In0.5Ga0.5As/GaAs quantum dots (QDs) were prepared by the technique of molecular beam epitaxy (MBE), Scanning tunneling microscope (STM) was used to characterize the samples grown at different growth temperature. The results show that the densities of the In0.5Ga0.5As/GaAs QDs increase first and then decrease, and the sizes increase with the increase of temperature. Besides, this work demonstrates that the growth mode of QDs is affected by curing mechanism of Ostwald. The energy that needed for the sizes increase is provided by strain energy and temperature, however, the growth of QDs is limited by the desorption of surface adatoms at high temperature . |
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| Keywords: | MBE In0 5Ga0 5As/GaAs QDs S-K Ostwald |
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