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面内双轴应力作用下单层黑磷能带性质研究
引用本文:王洁,许炎,刘贵鹏,田永辉,杨建红. 面内双轴应力作用下单层黑磷能带性质研究[J]. 原子与分子物理学报, 2020, 37(2): 199-205
作者姓名:王洁  许炎  刘贵鹏  田永辉  杨建红
作者单位:兰州大学物理科学与技术学院微电子研究所,教育部磁性与磁性材料重点实验室,兰州大学物理科学与技术学院微电子研究所,教育部磁性与磁性材料重点实验室,兰州大学物理科学与技术学院微电子研究所,教育部磁性与磁性材料重点实验室,兰州大学物理科学与技术学院微电子研究所,教育部磁性与磁性材料重点实验室,兰州大学物理科学与技术学院微电子研究所,教育部磁性与磁性材料重点实验室
基金项目:国家自然科学基金,甘肃省自然科学基金,中央高校基础研究经费
摘    要:通过第一性原理对平面内双轴应力作用下的单层黑磷能带结构进行了计算.双轴拉伸应力作用下单层黑磷始终保持直接带隙性质,双轴压缩应力作用下的单层黑磷则发生了直接带隙转变为间接带隙的现象,当双轴压缩应力增加到7%时单层黑磷带隙闭合.

关 键 词:单层黑磷,平面内双轴应力,能带结构,带隙
收稿时间:2019-03-26
修稿时间:2019-04-22

Band structure of monolayer black phosphorus under different intraplanar biaxial strain
Wang Jie,Xu Yan,Liu Gui-Peng,Tian Yong-Hui and Yang Jian-Hong. Band structure of monolayer black phosphorus under different intraplanar biaxial strain[J]. Journal of Atomic and Molecular Physics, 2020, 37(2): 199-205
Authors:Wang Jie  Xu Yan  Liu Gui-Peng  Tian Yong-Hui  Yang Jian-Hong
Affiliation:Institute of microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University,Institute of microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University,Institute of microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University,Institute of microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University and Institute of microelectronics and Key Laboratory for Magnetism and Magnetic Materials of MOE, School of Physical Science and Technology, Lanzhou University
Abstract:In this paper, the effect of intraplanar biaxial strain on the band structure of monolayer black phosphorus (BP) has been studied by using first-principles methods. Under the biaxial tension strain, the monolayer BP is a direct band gap semiconductor. Under the biaxial compression strain, the monolayer of BP changes from direct band gap to indirect band gap. When the biaxial compression strain increases to 7%, the band gap of monolayer BP closes.
Keywords:monolayer black phosphorus   intraplanar biaxial strain   band structure   band gap
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