Ga液滴沉积量对GaAs/GaAs(001)同心量子双环形貌的影响

通过液滴外延法制备了GaAs/GaAs(001)同心量子双环(Concentric Quantum Double Rings, CQDRs),研究了Ga液滴沉积量对CQDRs的影响.研究结果发现:随着Ga液滴沉积量的增加,CQDRs密度降低,内环高度增高,外环高度降低,中心孔洞深度增加. CQDRs内环拟合结果表明,Ga液滴沉积量少于0.92ML(Monolayer, ML)时无法成环;外环拟合结果显示,在本实验条件下,形成外环的最小Ga液滴沉积量为3.1ML.拟合结果与实验结果一致,相关研究结果对液滴外延法制备GaAs同心量子双环具有指导意义.

The Effect of Ga Droplet Deposition Amount on Morphology of Concentric Quantum Double Rings

In this paper, GaAs/GaAs(001) Concentric Quantum Double Rings (CQDRs) were prepared by droplet epitaxy, and the effect of Ga droplet deposition amount on CQDRs was studied. The results show that with the increase of Ga droplet deposition, the density of CQDRs decreases, meanwhile the height of inner ring increases, along with the height of the outer ring decreases, and the depth of the center hole increases. The fitting results for inner ring of CQDRs suggest that Ga droplet cannot form a ring if the deposition amount is less than 0.92ML. The outer ring fitting results reveal that the minimum Ga droplet deposition amount to form the outer ring is 3.1ML under the experimental conditions. The fitting results are consistent with the experimental results,and the related research results have guiding significance for the fabrication of GaAs concentric quantum double rings by droplet epitaxy.