交叉型纳米结构下气体位置对阿秒脉冲的影响

理论提出并研究了一种在交叉型纳米结构下运用非均匀极化门方案获得孤立阿秒脉冲的方法.结果表明,当气体沿纳米结构负方向注入时,用于产生阿秒脉冲的高阶谐波只发生在纳米结构的一侧.因此,在此方案下,不仅谐波截止能量得到延伸,而且谐波干涉结构得到减小.随后,通过叠加平台区的谐波,可获得一个持续时间在33 as的孤立阿秒脉冲.

Gas position effect on attosecond pulse generation in crossed nanostructure

An effect method to obtain the single attosecond pulses (SAPs) by using the inhomogeneous polarization gating (PG) technology in the crossed nanostructure has been proposed and investigated. It is found that by properly injecting the gas into the negative position of the nanostructure, the emitted harmonics at the very highest orders used for the SAPs only occur at one side of the region inside the nanostructure. As a result, not only the extension of the harmonic cutoff can be achieved, but also the modulations of the harmonics can be decreased. Further, by superposing the selected harmonics from the inhomogeneous PG scheme, a 33 as SAP can be obtained.