Field-induced stresses in field emitters |
| |
| Authors: | H.C. Eaton R.J. Bayuzick |
| |
| Affiliation: | Department of Engineering Science, Louisiana State University, Baton Rouge, Louisiana 70803, USA;Department of Materials Science, Vanderbilt University, Nashville, Tennessee 37235, USA |
| |
| Abstract: | A numerical analysis is performed in order to determine the magnitude and disposition of field-induced stresses in an axisymmetric field emitter whose profile is taken as a calculated profile of a real tungsten emitter. The results are compared to previous analyses and new observations are made. Conclusions are drawn which reflect the effect of these stresses on crystalline defects in the emitter during the imaging process and during field evaporation. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
