The origin of yellow band emission and cathodoluminescence of Au-catalyzed wurtzite GaN nanowires |
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| Institution: | 1. Geology Department, School of Mines, Federal University of Ouro Preto, Campus Morro do Cruzeiro, Ouro Preto, MG 35400-00, Brazil;2. School of Chemistry, Physics and Mechanical Engineering, Science and Engineering Faculty, Queensland University of Technology, GPO Box 2434, Brisbane, Queensland 4001, Australia;3. Federal University of Itajubá, Campus Itabira, Itabira, MG 35903-087, Brazil;1. International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Henan 450001, China;2. Center for Clean Energy and Quantum Structures, Zhengzhou University, Zhengzhou, Henan 450001, China;3. Department of Physics, Henan University of Technology, Zhengzhou, Henan 450052, China;4. Department of Basic Courses, Zhengzhou College of Science & Technology, Zhengzhou 450064, China;1. Key Laboratory for Special Area Highway Engineering of Ministry of Education, School of Highway, Chang’an University, Xi’an 710064, PR China;2. School of Mechanical and Aerospace Engineering, Oklahoma State University, Stillwater, OK 74078, USA;3. School of Mechanics, Civil Engineering and Architecture, Northwestern Polytechnical University, Xi’an 710072, PR China |
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| Abstract: | GaN nanowires with large yield are directly synthesized by simply ammoniating the gallium oxide powders in the presence of ammonia gas at 1000 °C, under the assistance of Au nanocatalysts. The microstructure and crystallinity of as-synthesized GaN nanowires are well studied by using high-resolution transmission electron microscope (HRTEM) and some structural defects such as stacking faults are found in the GaN nano-crystal. Cathodoluminescence measurement shows that a strong near-band-edge (NBE) emission band centered at 384 nm and a broad yellow band in the range of 500–800 nm are observed. Finally, the growth mechanism and possible optical emission process of GaN nanowires are discussed. |
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| Keywords: | GaN nanowires Catalytic growth TEM Defect Cathodoluminescence |
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