首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Quantum capacitance in monolayers of silicene and related buckled materials
Institution:1. CNR-IOM Laboratorio TASC, Area Science Park, Basovizza, 34149 Trieste, Italy;2. International Centre for Theoretical Physics (ICTP), I-34014 Trieste, Italy;3. CDL, Physics Division, PINSTECH, P. O. Nilore, Islamabad, Pakistan;4. Department of Physics, Concordia University, Montreal, Quebec, Canada H3G 1M8;1. Shahrekord University of medical Sciences, Shahrekord, Iran;2. Faculty of Advanced Sciences and Technologies, University of Isfahan, Isfahan, Iran;3. Mechanical Engineering Group, Shahrekord Branch, Islamic Azad University, Shahrekord, Iran;4. Physics Department, Shiraz University, Shiraz 71454, Iran;1. MOE Key Laboratory for Non-Equilibrium Synthesis and Modulation of Condensed Matter, Department of Applied Physics, Science of School, Xi''an Jiaotong University, Xi''an 710049, China;2. School of Physics and Telecommunication Engineering, Shaanxi University of Technology, Hanzhong 723001, China;1. Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel;2. Institute for Theoretical Physics, University of Leipzig, Vor dem Hospitaltore 1, D-04103 Leipzig, Germany;3. Department of Physics, Harvard University, Cambridge, MA 02138, USA;1. Amirkhanov Institute of Physics Russian Academy of Sciences, Dagestan Science Centre, Makhachkala, Russia;2. Prokhorov General Physics Institute Russian Academy of Sciences, Moscow, Russia;3. Dagestan States University, Makhachkala, Russia;4. Instituto de Física, Universidade Federal Fluminense, Av. Gal. Milton Tavares de Souza s/n, 24210-346, Niterói, RJ, Brazil
Abstract:Silicene and related buckled materials are distinct from both the conventional two dimensional electron gas and the famous graphene due to strong spin orbit coupling and the buckled structure. These materials have potential to overcome limitations encountered for graphene, in particular the zero band gap and weak spin orbit coupling. We present a theoretical realization of quantum capacitance which has advantages over the scattering problems of traditional transport measurements. We derive and discuss quantum capacitance as a function of the Fermi energy and temperature taking into account electron–hole puddles through a Gaussian broadening distribution. Our predicted results are very exciting and pave the way for future spintronic and valleytronic devices.
Keywords:Silicene and related materials  Quantum capacitance  Spin Orbit Interactions  Puddle effects
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号