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Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells
Affiliation:1. Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China;2. Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China;3. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People''s Republic of China;4. Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou 213164, Jiangsu, China;1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;3. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova;2. Institute of Applied Physics, Moldavian Academy of Science, Chisinau MD-2028, Republic of Moldova;3. Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;1. Department of Applied Physics, University for Development Studies, Navrongo, Ghana;2. Department of Physics, College of Agriculture and Natural Sciences, U.C.C., Ghana;3. Department of Mathematics, College of Agriculture and Natural Sciences, U.C.C., Ghana;1. School of Physical Electronics, Joint Laboratory for Police Equipment Research, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou 635000, PR China;1. Medical Physics Department, School of Medicine, Iran University of Medical Sciences (IUMS), Tehran, Iran;2. Biochemistry Department, School of Medicine, Iran University of Medical Sciences, Tehran, Iran
Abstract:
Keywords:In-plane optical anisotropy  Reflectance difference spectroscopy  Inserted InAs layer  Segregation length  Direct and inverted interfaces
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