Enhanced carrier injection in InGaN/GaN multiple quantum wells LED with polarization-induced electron blocking barrier |
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| Institution: | 1. Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576, Singapore;2. Institute of Materials Research and Engineering (IMRE), A?STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis 08-03, Singapore 138634, Singapore;3. Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602, Singapore;1. Instituto de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;2. Departamento de Física de Materiales, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, E-28040 Madrid, Spain;1. School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China;2. Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan;3. Science and Technology on Advanced Functional Composite Laboratory Aerospace Research Institute of Materials and Processing Technology, China;4. Institute for Materials Research, Tohoku University, Sendai 9800812, Japan |
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| Abstract: | In this report, we designed a light emitting diode (LED) structure in which an N-polar p-GaN layer is grown on top of Ga-polar In0.1Ga0.9N/GaN quantum wells (QWs) on an n-GaN layer. Numerical simulation reveals that the large polarization field at the polarity inversion interface induces a potential barrier in the conduction band, which can block electron overflow out of the QWs. Compared with a conventional LED structure with an Al0.2Ga0.8N electron blocking layer (EBL), the proposed LED structure shows much lower electron current leakage, higher hole injection, and a significant improvement in the internal quantum efficiency (IQE). These results suggest that the polarization induced barrier (PIB) is more effective than the AlGaN EBL in suppressing electron overflow and improving hole transport in GaN-based LEDs. |
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| Keywords: | GaN-based LED Polarization-induced barrier Carrier injection Quantum wells |
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