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Control of two-dimensional electron population in a semiconductor quantum well
Affiliation:1. National Polytechnic Institute, ESFM, Mexico, D.F. 07738, Mexico;2. National Polytechnic Institute, UPIITA, Mexico, D.F. 07320, Mexico;1. Institute of Molecular Physics, Polish Academy of Sciences, ul. M. Smoluchowskiego 17, 60-179 Poznań, Poland;2. Jožef Stefan Institute, Ljubljana, Slovenia;3. Faculty of Mathematics and Physics, University of Ljubljana, Ljubljana, Slovenia;1. NEST, Scuola Normale Superiore, and Istituto Nanoscienze-CNR, I-56126 Pisa, Italy;2. MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand;3. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy;1. Dipartimento di Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy;2. Nano-Bio Spectroscopy Group, Departamento de Fìsica de Materiales, Universidad del Paìs Vasco UPV/EHU, E-20018 San Sebastiàn, Spain
Abstract:We investigate the two-dimensional (2D) electron population in a semiconductor quantum well. It is found that, due to the position-dependent quantum interference, the 2D spatial distribution of electron population can be easily controlled via adjusting the system parameters. Thus, our scheme shows the underlying probability for the applications in solid-state optoelectronics.
Keywords:2D electron population  Standing wave  Semiconductor quantum well
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