Magnetic field effects on THz quantum cascade laser: A comparative analysis of three and four quantum well based active region design |
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| Affiliation: | 2. School of Electrical Engineering, University of Belgrade, Bulevar kralja Aleksandra 73, 11120 Belgrade, Serbia;3. Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds, Woodhouse Lane, Leeds LS2 9JT, UK;1. Department of Applied Physics, University for Development Studies, Navrongo, Ghana;2. Department of Physics, College of Agriculture and Natural Sciences, U.C.C., Ghana;3. Department of Mathematics, College of Agriculture and Natural Sciences, U.C.C., Ghana;1. School of Materials Science and Engineering, Shandong Jianzhu University, Fengming Road #1000, Jinan 250101, PR China;2. Department of Chemical and Materials Engineering, University of Kentucky, Lexington, KY 40506, USA;3. Beijing Aeronautical Manufacturing Technology Research Institute, Beijing 100024, PR China;1. Department of Physics and Engineering, Moldova State University, Chisinau MD-2009, Republic of Moldova;2. Institute of Applied Physics, Moldavian Academy of Science, Chisinau MD-2028, Republic of Moldova;3. Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea;1. School of Physical Electronics, Joint Laboratory for Police Equipment Research, University of Electronic Science and Technology of China, Chengdu 610054, PR China;2. School of Physics and Mech-tronic Engineering, Sichuan University of Arts and Science, Dazhou 635000, PR China;1. Department of Solid State Physics, Yerevan State University, Alex Manoogian 1, 0025 Yerevan, Armenia;2. National University of Architecture and Construction of Armenia, Teryan 105, 0009 Yerevan, Armenia;3. Instituto de Alta Investigación, Universidad de Tarapacá, Casilla 7D, Arica, Chile;4. SUPA School of Physics and Astronomy, University of Glasgow, Glasgow G12 8QQ, United Kingdom;1. National Institute for Research and Development of Isotopic and Molecular Technologies, 67-103 Donat Street, RO-400293 Cluj-Napoca, Romania;2. Center for Integrative Nanotechnology Sciences, University of Arkansas at Little Rock, 2801 South University Ave, Little Rock 72204, USA;3. Department of Chemistry, University of Arkansas at Little Rock, 2801 South University Ave, Little Rock 72204, USA |
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| Abstract: | We consider the influence of additional carrier confinement, achieved by application of strong perpendicular magnetic field, on inter Landau levels electron relaxation rates and the optical gain, of two different GaAs quantum cascade laser structures operating in the terahertz spectral range. Breaking of the in-plane energy dispersion and the formation of discrete energy levels is an efficient mechanism for eventual quenching of optical phonon emission and obtaining very long electronic lifetime in the relevant laser state. We employ our detailed model for calculating the electron relaxation rates (due to interface roughness and electron–longitudinal optical phonon scattering), and solve a full set of rate equations to evaluate the carrier distribution over Landau levels. The numerical simulations are performed for three- and four-well (per period) based structures that operate at 3.9 THz and 1.9 THz, respectively, both implemented in GaAs/Al0.15Ga0.85As. Numerical results are presented for magnetic field values from 1.5 T up to 20 T, while the band nonparabolicity is accounted for. |
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| Keywords: | Quantum Cascade Laser Quantum well Magnetic field |
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