Recombination processes in structures with GaN/ALN quantum dots |
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| Institution: | 1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia;2. Novosibirsk State University, 630090 Novosibirsk, Russia;1. NEST, Scuola Normale Superiore, and Istituto Nanoscienze-CNR, I-56126 Pisa, Italy;2. MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand;3. NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, I-56126 Pisa, Italy;1. Yerevan State University, Faculty of Physics, Department of Solid State Physics, 1 Al. Manoogian, Yerevan 0025, Armenia;2. State Engineering University of Armenia, 105, V. Teryan, Yerevan 0009, Armenia;1. Dipartimento di Matematica e Fisica, Università Roma Tre, Via della Vasca Navale 84, 00146 Roma, Italy;2. Nano-Bio Spectroscopy Group, Departamento de Fìsica de Materiales, Universidad del Paìs Vasco UPV/EHU, E-20018 San Sebastiàn, Spain |
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| Abstract: | Mechanisms of the generation and the radiative and nonradiative recombination of carriers in structures with GaN quantum dots in the AlN matrix are studied experimentally and theoretically. Absorption, stationary and nonstationary photoluminescence of quantum dots at different temperatures are investigated. It is found that the photoluminescence intensity considerably decreases with the temperature while the photoluminescence kinetics weakly depends on the temperature. The photoluminescence kinetics is shown to be determined by radiative recombination inside quantum dots. A mechanism of nonradiative recombination is proposed, according to which the main reason for the thermal quenching of photoluminescence is nonradiative recombination of charge carriers, generated by optical transitions between quantum dots and wetting layer states. |
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| Keywords: | Quantum dots GaN AlN Photoluminescence |
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