Nonlinear thermoelectric response due to energy-dependent transport properties of a quantum dot |
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| Institution: | 1. Institut für Theoretische Festkörperphysik, Karlsruhe Institute of Technology, 76131 Karlsruhe, Germany;2. Institute of Nanotechnology, Karlsruhe Institute of Technology, 76344 Eggenstein-Leopoldshafen, Germany;1. Université de Nice Sophia-Antipolis, INLN, CNRS, 06560 Valbonne, France;2. Institut-Lorentz, Universiteit Leiden, P.O. Box 9506, 2300 RA Leiden, The Netherlands;3. Aix Marseille Université, CNRS, CPT, UMR 7332, 13288 Marseille, France;4. Université de Toulon, CNRS, CPT, UMR 7332, 83957 La Garde, France;1. Univ. Grenoble Alpes, INAC-SPSMS, F-38000 Grenoble, France;2. CEA, INAC-SPSMS, F-38000 Grenoble, France;3. Department of Physics, College of William and Mary, Williamsburg, Virginia 23187, USA;4. Kavli Institute of NanoScience, Delft University of Technology, Lorentzweg 1, NL-2628 CJ, Delft, The Netherlands;1. Departamento de Física e Química, Unesp – Univ Estadual Paulista, 15385-000, Ilha Solteira, SP, Brazil;2. IGCE, Unesp – Univ Estadual Paulista, Departamento de Física, 13506-900, Rio Claro, SP, Brazil;1. Kantonsschule Frauenfeld, Ringstrasse 10, CH-8500 Frauenfeld, Switzerland;2. Instituto de Física Interdisciplinar y Sistemas Complejos IFISC (UIB-CSIC), E-07122 Palma de Mallorca, Spain |
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| Abstract: | Quantum dots are useful model systems for studying quantum thermoelectric behavior because of their highly energy-dependent electron transport properties, which are tunable by electrostatic gating. As a result of this strong energy dependence, the thermoelectric response of quantum dots is expected to be nonlinear with respect to an applied thermal bias. However, until now this effect has been challenging to observe because, first, it is experimentally difficult to apply a sufficiently large thermal bias at the nanoscale and, second, it is difficult to distinguish thermal bias effects from purely temperature-dependent effects due to overall heating of a device. Here we take advantage of a novel thermal biasing technique and demonstrate a nonlinear thermoelectric response in a quantum dot which is defined in a heterostructured semiconductor nanowire. We also show that a theoretical model based on the Master equations fully explains the observed nonlinear thermoelectric response given the energy-dependent transport properties of the quantum dot. |
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| Keywords: | Nanowire Thermoelectrics Nonlinear Coulomb blockade Thermocurrent Top-heating |
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