Pt coated Cr2O3 thin films for resistive gas sensors

The resistive response of atomic layer deposited thin epitaxial α-Cr₂O₃(0 0 1) films, to H₂ and CO in air, was studied. The films were covered with Pt nanoislands formed by electron-beam evaporation of a sub-monolayer amount of the material. The gas measurements were performed at 250°C and 450°C. These temperatures led to different proportion of chemical states, Pt²⁺ and Pt⁴⁺, to which the Pt oxidized. The modification was ascertained by the X-ray photoelectron spectroscopy method. As a result of the modification, the response was fast at 250°C, but slowed at 450°C. A disadvantageous abundance of Pt⁴⁺ arising at 450°C in air could be diminished by high-vacuum annealing thus restoring the response properties of the system at 250°C.