Transient domain wall displacement under spin-polarized
current pulses |
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Authors: | A Thiaville Y Nakatani F Piéchon J Miltat T Ono |
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Institution: | (1) CNRS, Laboratoire de Physique des Solides, UMR 8502, 91405 Orsay, France and Univ. Paris-Sud, Batiment 510, 91405 Orsay, France;(2) Department of Computer Science, Univ. of Electrocommunications, Chofu, 182-8585, Tokyo, Japan;(3) Institute for Chemical Research, Kyoto Univ., Uji, 611-0011, Kyoto, Japan |
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Abstract: | This paper investigates the non steady-state
displacement of magnetic domain walls in a nanostrip submitted to a
time-dependent spin-polarized current flowing along the nanostrip.
First, numerical micromagnetic simulations show that a domain wall
can move under application of a current pulse, and that the
displacement resulting from a conversion of the domain wall
structure is quantized.
The numerical findings are subsequently explained in the framework of
simplified
analytic models, namely the 1D model and the point-core vortex model.
We then introduce the concept of an angle linked to the magnetization
of a general domain wall, and show that it allows understanding the
transient phenomena quite generally.
Simple analytic formulas are derived and compared to experiments.
For this, charts are given for the key parameters of the domain wall
mechanics, as obtained from numerical micromagnetic simulations.
We finally discuss the limitations of this work, by looking at the
influence of temperature elevation under current, presence of
a non-adiabatic term, and of disorder. |
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Keywords: | 72 25 -b Spin polarized transport 85 75 -d Magnetoelectronics spintronics 75 75 +a Magnetic properties of nanostructures 75 60 Ch Domain walls and domain structure |
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