Photoreflectance spectroscopy of a Ga0.62In0.38N0.026As0.954Sb0.02/GaAs single quantum well tailored at 1.5 μm |
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| Authors: | R Kudrawiec M Gladysiewicz HB Yuen MA Wistey James S Harris |
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| Institution: | a Institute of Physics, Wroc?aw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroc?aw, Poland
b Solid State and Photonics Laboratory, Department of Electrical Engineering, Stanford University, 126X CISX, Via Ortega, Stanford, CA 94305-4075, USA |
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| Abstract: | Optical properties of a Ga0.62In0.38As0.954N0.026Sb0.02/GaAs single quantum well (SQW) tailored at ∼1.5 μm have been investigated by photoreflectance (PR) spectroscopy. The identification of the optical transitions was carried out in accordance with theoretical calculations, which were performed within the framework of the usual envelope function approximation. Using this method, four confined states for both electrons and heavy holes have been found and the optical transitions between them have been determined. The obtained result corresponds to a conduction band offset ratio close to 80%. In addition, the effect of ex situ annealing has been investigated. Lineshape analysis of the PR transitions shows that one of the phenomena responsible for the blueshift of QW transitions is the change in the nitrogen nearest-neighbour environment from Ga-rich to In-rich environments. |
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| Keywords: | 78 67 De |
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