Argon ion-dissipated energy on atomic driving in zinc-VIA films growth

Under an assumption of rectilinear trajectories for the projectile into a solid surface, a distinct expression for the ‘energy window’ of the driving atoms in a monolayer has been drawn for different ion-target systems, in which the atomic displacements take place primarily in the surface layer, while the subsurface layer is kept undamaged. This approach of determining the appropriate energy interval to enhance the mobility of adatom is applied to ion-assisted growth of zinc sulfide (ZnS), zinc selenide (ZnSe), and zinc telluride (ZnTe) epitaxial layers, respectively. The calculating results are in good agreement with the experimental observation of ZnTe semiconductor materials in the energetic cluster beam.