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Raman scattering characterization of vertical aligned 1D IrO2 nanocrystals grown on single crystal oxide substrates |
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| Authors: | Alexandru V. Korotcov Dah-Shyang Tsai |
| Affiliation: | a Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan b Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan c Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan |
| Abstract: | Raman scattering (RS) has been used as a technique for characterization of IrO2 one dimensional (1D) nanocrystals (NCs) deposited on sapphire(100) and LiNbO3(100) substrates under various conditions. The IrO2 NCs were grown via metalorganic chemical vapor deposition method using (MeCp)(COD)Ir as the precursor and reactive magnetron sputtering using Ir metal target. The red-shifts and asymmetric broadening of the Raman lineshape for the NCs were analyzed by a modified spatial correlation (MSC) model, which includes the factor of stress induced shift. The proposed MSC model showed that the effects of stress and nanometric size can be separated in analyzing the observed Raman features. The usefulness of the experimental RS together with the MSC model analysis as a residual stress and structural characterization technique for 1D NCs has been demonstrated. |
| Keywords: | 61.46.+w 78.30.&minus j |
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