Raman scattering studies of the Ge-In sulfide glasses

Room temperature Raman scattering measurements of samples of the (1−x)GeS₂-xIn₂S₃ (x=0.00-0.35) system have been conducted together with the FTIR transmission spectra of partial samples. Based on the Raman scattering and FTIR transmission spectra of the prepared defect spinel polycrystalline In₂S₃, the additional peaks at 306 and 245 cm⁻¹ were ascribed to the local symmetric stretching vibration of InS₄ tetrahedra and InS₆ octahedra, respectively. According to the Raman scattering spectral evolution of the Ge-In sulfide glasses, the microstructure of the studied glasses was considered to be that S₃Ge-GeS₃ and S₃In-InS₃ ethane-like units originated from the sulfur deficient with the addition of In₂S₃ are homogeneously dispersed in a disordered polymer network formed by GeS₄, InS₄ tetrahedra and a small quantity of InS₆ octahedra interconnected by sulfur bridges.