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Changes in optical and electrical properties and surface recombination velocity of n-type GaN due to (NH4)2Sx treatment |
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| Authors: | Yow-Jon Lin Wen-Xiang Lin Feng-Tso Chien |
| Affiliation: | a Institute of Photonics, National Changhua University of Education, No. 1, Jin-De Road, Changhua 500, Taiwan, ROC b Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan 701, Taiwan, ROC c Department of Electronic Engineering, Feng Chia University, Taichung 407, Taiwan, ROC |
| Abstract: | We have employed the photoluminescence (PL), surface photovoltage spectroscopy (SPS) and Hall effect measurements to study the effects of (NH4)2Sx treatment on the optical and electrical properties of n-type GaN (n-GaN) in this study. (NH4)2Sx treatment of n-GaN led to the decrease of the surface recombination velocity and the increase of the band-edge emission intensity, due to the accumulation of majority carriers and the repulsion of minority carriers near the (NH4)2Sx-treated n-GaN surface, the removal of the native oxide existed on the n-GaN, and sulfur passivation. |
| Keywords: | 72.80.&minus r 72.40.+w 72.80.Ey 73.25.+i 73.50.Pz 73.61.Ey 78.55.Cr |
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