First‐principles calculation of electronic structure of V‐doped anatase TiO2 |
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Authors: | Run Long Dr Niall J English Dr |
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Institution: | 1. SEC Strategic Research Cluster;2. The Centre for Synthesis and Chemical Biology, School of Chemical and Bioprocess Engineering, University College Dublin, Belfield, Dublin 4 (Ireland), Fax: (+353)?1‐716‐1177 |
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Abstract: | The energetic and electronic structures of V‐doped anatase TiO2 have been investigated systematically by the GGA+U approach, including replacement of Ti by V in the absence and presence of oxygen vacancies and the presence of an interstitial site. It was found that V should exist as a V4+ ion in the replacement of Ti in the anatase lattice, the electron transitions of which to the conduction band from V 3d states are responsible for the experimentally observed visible light absorption. The influence of V dopant concentration on the electronic and magnetic properties is also discussed, such as the influence of the U value in systems containing oxygen vacancies and spin flip phenomena for interstitial V‐doping. |
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Keywords: | density functional calculations electronic structure interstitial sites oxygen vacancies titanium dioxide |
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