Oscillations of the free electron concentration in a semiconductor under the action of a femtosecond pulse

The interaction of a femtosecond light pulse with a semiconductor is studied in the approximation of an optically thin layer taking into account the dependence of the absorption coefficient on the light-induced electric field. A possibility of the development of spatial oscillations of semiconductor characteristics (concentrations of free electrons and ionized donors and the strength of the light-induced electric field) under the action of a Gaussian beam is demonstrated on the basis of computer simulation and linear analysis.