| IC工艺中互连薄膜晶粒生长的实验和理论模型 |
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| 引用本文： | 刘键,黄榕旭,蒋聚小,郑国祥.IC工艺中互连薄膜晶粒生长的实验和理论模型[J].固体电子学研究与进展,2003,23(4):526-531. |
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| 作者姓名： | 刘键 黄榕旭 蒋聚小 郑国祥 |
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| 作者单位： | 1. 复旦大学材料科学系,上海,200433
2. 上海先进半导体公司,上海,200233 |
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| 摘 要： | 通过研究不同淀积温度下铝互连薄膜的晶粒形态 ,研究晶粒的生长规律。建立理论模型描述加热过程中薄膜晶粒的行为 ,可据此进行工艺模拟 ,对 IC制造工艺进行事前评估。根据薄膜晶粒生长的机理 ,得到晶粒尺寸和温度及时间的关系。由于薄膜晶粒的生长使表面能减小 ,晶粒的平均尺寸随生长时间增大。对晶粒尺寸的观察证实晶粒大小近似对数正态分布
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| 关 键 词： | 互连薄膜 晶粒生长 表面能 对数正态分布 |
| 文章编号： | 1000-3819(2003)04-526-06 |
| 修稿时间： | 2003年1月13日 |
The Theoretical Model and Experiment for the Grain Growth of IC Interconnect Materials |
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| LIU Jian,HUANG Rongxu,JIANG Juxiao,ZHENG Gu oxiang.The Theoretical Model and Experiment for the Grain Growth of IC Interconnect Materials[J].Research & Progress of Solid State Electronics,2003,23(4):526-531. |
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| Authors: | LIU Jian HUANG Rongxu JIANG Juxiao ZHENG Gu oxiang |
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| Institution: | LIU Jian 1 HUANG Rongxu 2 JIANG Juxiao 1 ZHENG Gu oxiang 1 |
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| Abstract: | Obvious grain growth of IC intercon nect thin film has been observed in our experiment when ploycrystalline material is heated. It is believed that the surface energy associated with grain boundar y is minimized. We describe the movement of grain boundary during the process an d establish the theoretical model involving grain size, heat temperature, and ti me, which is very important for process simulation and manufacture prediction. F rom the experiment result, we confirm that the grain size distribution for a thi n film that has undergone normal grain growth is close to lognormal distribution . |
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| Keywords: | interconnect grain growth surface energy log normal distribution |
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