Depth profile analysis of thin film solar cells using SNMS and SIMS |
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| Authors: | M Gastel U Breuer H Holzbrecher J S Becker H-J Dietze H Wagner |
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| Institution: | Zentralabteilung für Chemische Analysen, Forschungszentrum Jülich, D-52425 Jülich, Germany, DE
Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich, D-52425 Jülich, Germany, DE
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| Abstract: | SNMS (sputtered neutrals mass spectrometry) and SIMS (secondary ion mass spectrometry) are used for the depth profile analysis of thin film solar cells based on amorphous silicon. In order to enhance depth resolution, model systems are analyzed only representing parts of the layered system. Results concerning the TCO (transparent conducting oxide)/p interface and the n/i interface are presented. To minimize matrix effects, SNMS is used when the sample consists of layers with different matrices. Examples are the TCO/p interface (where the transition lengths of the depth profiles are found to be sharper when ZnO is used as TCO compared to SnO2) and SnO2/ZnO interfaces in coated TCO layers (where a Sn contamination inside the ZnO layer is found depending on the plasma pressure during the ZnO deposition). SIMS is used when the limits of detection reached by SNMS are not sufficient. Examples are H depth profiles in ZnO layers or P depth profiles near the n/i-interface. |
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