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Characterization of rhenium-silicon thin films
Authors:J. Thomas  Joachim Schumann  Wolfram Pitschke
Affiliation:Institut für Festk?rper- und Werkstofforschung Dresden, Postfach 270016, D-01171 Dresden, Germany, DE
Abstract:Rhenium-silicon thin films have been characterized as promising compounds of thermoelectric applications by means of analytical transmission electron microscopy and X-ray diffraction referring to composition, morphology, short-range order and phase formation. Beyond the discussion of the results some methodical aspects and problems are presented.
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