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AFM and STM investigations of hydrogenated amorphous silicon: topography and barrier heights |
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| Authors: | J. Herion K. Szot S. Barzen F. Siebke M. Teske |
| Affiliation: | Institut für Schicht- und Ionentechnik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, DE Silesian University, PL-40-007 Katowice, Poland, PL Joint Institute for Laboratory Astrophysics, University of Colorado, Boulder, CO 80309-0440, USA, US Institut für Grenzfl?chenforschung und Vakuumphysik, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany, DE |
| Abstract: | As-grown films of hydrogenated amorphous silicon (a-Si?:?H, highly phosphorous-doped) were investigated by atomic force microscopy (AFM) and scanning tunneling microscopy (STM). Hills up to 10 nm in height and 10 to 20 nm in diameter have been observed by AFM. By using STM in a new high-sensitivity mode, (1) atomically smooth areas (roughness about 0.3 Å rms) which occur at the top of the hills, (2) subnanometer structures several Å in height which cover large parts of the surface have been identified. Simultaneous measurements of the local apparent barrier heights (LABH) show a clear correlation to the topography. Areas showing subnanometer structures have always low LABHs while the highest values of the LABH occur on the smooth areas. |
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